| 发明名称 |
ANODIZING METHOD AND APPARATUS AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD |
| 摘要 |
A porous layer having a multilayered structure is formed. An Si substrate (102) to be processed is anodized in a first electrolytic solution (141, 151) while being held between an anode (106) and a cathode (104) in an anodizing bath (101). The first electrolytic solution (141, 151) is exchanged with a second electrolytic solution (142, 152). The Si substrate (102) is anodized again, thereby forming a porous layer having a multilayered structure on the Si substrate (102).
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| 申请公布号 |
US2003008473(A1) |
申请公布日期 |
2003.01.09 |
| 申请号 |
US19990251668 |
申请日期 |
1999.02.17 |
| 申请人 |
SAKAGUCHI KIYOFUMI;SATO NOBUHIKO |
发明人 |
SAKAGUCHI KIYOFUMI;SATO NOBUHIKO |
| 分类号 |
C25D11/04;C25D11/32;C25D17/00;H01L21/02;H01L21/306;H01L21/3063;H01L21/762;H01L27/12;(IPC1-7):H01L21/84;H01L21/46;H01L21/30;H01L21/00;H01L21/76 |
主分类号 |
C25D11/04 |
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