发明名称 |
METHOD OF FORMING A FIELD EFFECT TRANSISTOR |
摘要 |
A method of forming a field effect transistor includes forming a channel region within bulk semiconductive material of a semiconductor substrate. Source/drain regions are formed on opposing sides of the channel region. An insulative dielectric region is formed within the bulk semiconductive material proximately beneath at least one of the source/drain regions. A method of forming a field effect transistor includes providing a semiconductor-on-insulator substrate, said substrate comprising a layer of semiconductive material formed over a layer of insulative material. All of a portion of the semiconductive material layer and all of the insulative material layer directly beneath the portion are removed thereby creating a void in the semiconductive material layer and the insulative material layer. Semiconductive channel material is formed within the void. Opposing source/drain regions are provided laterally proximate the channel material. A gate is formed over the channel material. Integrated circuitry includes a bulk semiconductor substrate. A field effect transistor thereon includes a gate, a channel region in the bulk semiconductor substrate, and source/drain regions within the substrate on opposing sides of the channel region. A field isolation region is formed in the bulk semiconductor substrate and laterally adjoins with one of the source/drain regions. The field isolation region includes a portion which extends beneath at least some of the one source/drain region. Other aspects are contemplated.
|
申请公布号 |
US2003008438(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020236662 |
申请日期 |
2002.09.05 |
申请人 |
ABBOTT TODD R.;WANG ZHONGZE;TRIVEDI JIGISH D.;CHO CHIH-CHEN |
发明人 |
ABBOTT TODD R.;WANG ZHONGZE;TRIVEDI JIGISH D.;CHO CHIH-CHEN |
分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/417;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|