Method of manufacturing semiconductor laser element

摘要

Provided is a method of manufacturing a semiconductor laser element for collectively forming semiconductor laser elements having diffraction grating partially provided at least on the side of laser light emitting end surface or laser light reflection end surface side using a semiconductor process technique. The method comprises the step of performing electron beam exposure or ion beam exposure for drawing only on a diffraction grating region on which said diffraction grating is provided in correspondence with a pattern of said diffraction grating, and masking the diffraction grating region and exposing a region other than said diffraction grating region with light or X-rays.