发明名称 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
摘要 An insulation film very low in permittivity and high in mechanical strength. A semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wirings when a semiconductor device is fined and highly integrated. An inorganic insulation film, having a porous structure that has holes cyclically arranged and has a skeleton structure provided with many pores, is provided to meet the above requirements.
申请公布号 WO03003450(A1) 申请公布日期 2003.01.09
申请号 WO2002JP06507 申请日期 2002.06.27
申请人 ROHM CO., LTD.;OKU, YOSHIAKI 发明人 OKU, YOSHIAKI
分类号 H01L23/522;H01L21/316;H01L21/768;H01L21/8246;H01L23/532;H01L27/105 主分类号 H01L23/522
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