发明名称 |
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR |
摘要 |
An insulation film very low in permittivity and high in mechanical strength. A semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wirings when a semiconductor device is fined and highly integrated. An inorganic insulation film, having a porous structure that has holes cyclically arranged and has a skeleton structure provided with many pores, is provided to meet the above requirements. |
申请公布号 |
WO03003450(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
WO2002JP06507 |
申请日期 |
2002.06.27 |
申请人 |
ROHM CO., LTD.;OKU, YOSHIAKI |
发明人 |
OKU, YOSHIAKI |
分类号 |
H01L23/522;H01L21/316;H01L21/768;H01L21/8246;H01L23/532;H01L27/105 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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