| 摘要 |
<p>Disclosed are methods and apparatus for detecting defects in a partially fabricated semiconductor device with self-aligned contacts. The self-aligned contacts are formed from a first layer with a plurality of contact portions (404), a second layer with a plurality of conductive lines (402) that are each aligned proximate to an associated underlying contact portion (404), and a third insulating layer (406) formed over the conductive lines (402) and their proximate underlying contact portions (404). The third insulating layer (406) has a plurality of vias formed therein that are each formed alongside a one of the conductive lines (402) and over its proximate underlying contact portion (404). A charged particle beam is scanned over a portion of the vias to form a voltage contrast image of each via. When a minority of the vias in the image have a significantly different brightness level than a majority of the vias, it is then determined that the minority of vias have defects.</p> |
