Semiconductor component used in high voltage applications comprises a silicon carbide layer, an anode having a Schottky contact, a cathode having an ohmic contact and control having a Schottky contact

摘要

Semiconductor component comprises: silicon carbide layer (101) having predetermined conductivity type with a surface (101S1) having a third region (R3) arranged between first region (R1) and second region (R2); an anode (102) having Schottky contact with the first region; a cathode (103) having an ohmic contact with second region; and control (104) having a Schottky contact with the third region. An Independent claim is also included for a module unit comprising a conducting plate, the above semiconductor component and an encapsulating housing. Preferred Features: At least one Schottky electrode from the anode and the control electrode has a thickness of not less than 5 mu m. The silicon carbide layer further comprises a rear side surface (101S2) lying opposite the surface (101S1).