| 摘要 |
PURPOSE: A method for forming a gate oxide layer in semiconductor devices is provided to improve quality of the gate oxide layer by preventing the direct contact between an oxide layer and a photoresist pattern using a pad nitride layer. CONSTITUTION: A pad oxide layer(32) and a pad nitride layer are sequentially formed on a semiconductor substrate(31) defined by the first and second region(A,B). An isolation layer(34) is formed at a desired region of the semiconductor substrate(31). The pad nitride layer and the pad oxide layer(32) located in the second region(B) are removed. The pad nitride layer of the first region(A) is then removed. An oxide layer(36) is formed on the resultant structure, so that the first gate oxide layer(37) including the pad oxide layer(32) and the oxide layer(36) is formed on the first region(A). Also, the oxide layer(36) is used as the second gate oxide layer on the second region(B).
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