| 摘要 |
PURPOSE: A method for forming an SAC(Self Aligned Contact) plug of semiconductor devices is provided to improve the contact resistance between a plug and a substrate by compensating the thickness of a hard mask using an insulating layer having a bad step-coverage. CONSTITUTION: A gate electrode(50) on which sequentially stacked a gate oxide layer(54), a conductive layer(55) and a hard mask layer(56) is formed on a semiconductor substrate(51). An insulating layer(58) having a bad step-coverage is formed on the resultant structure, wherein the insulating layer(58) is thickly formed on the gate electrode(50) and thinly formed at both sidewalls of the gate electrode. After forming an interlayer dielectric(59) on the resultant structure, a contact hole is formed by selectively etching the interlayer dielectric(59) and the insulating layer(58). A plug is then filled into the contact hole.
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