| 摘要 |
PURPOSE: A method for forming a metal line of semiconductor devices is provided to improve yield by easily removing metallic polymers using H2O passivation and CF4 gas. CONSTITUTION: An aluminum metal film is formed on a substrate. An ARC(Anti Reflective Coating) film made of TiN is formed on the metal film. A metal line is formed by selectively etching the ARC film and the metal film using a photoresist pattern. Then, the photoresist pattern is removed. At this time, metallic polymers located at the upper and sidewalls of the photoresist pattern are simultaneously removed by using H2O passivation and CF4 gas.
|
