| 摘要 |
PURPOSE: A method for fabricating semiconductor device is provided to prevent the loss of a gate oxide layer occurring on the edge of active region by infusing fluorine into the sidewall of a trench when forming the oxide layer. CONSTITUTION: A pad oxide layer for protecting stress and pad nitride layer for protecting oxidation are formed on semiconductor substrate(10). A trench is etched by using photo resist pattern. High-density fluorine is infused into the sidewall of the trench to activate oxidation. An insulating layer for burying trench covers the whole surface of structure and is selectively eliminated by CMP method. A gate oxide layer(18) is formed on the insulating layer.
|
