| 摘要 |
PURPOSE: A fabrication method of CCDs(Charge Coupled Devices) is provided to improve charge transmission efficiency by using an advanced VCCD(Vertical CCD) structure. CONSTITUTION: A well(202) is formed in a semiconductor substrate(200). A charge transmission region(BCCD)(204) and a photodiode region(PDN) are formed in the well(202). An insulating pattern(220) is formed on edge portions of the BCCD(204) for concentrating potential from the edge to the center of the BCCD(204). A gate insulating layer and a gate(208) are sequentially formed on the resultant structure.
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