| 摘要 |
PURPOSE: A fabrication method of a transistor in semiconductor devices is provided to improve short-channel effect and deep punch-through by improving punch-through and channel threshold voltage ion-implantation processing. CONSTITUTION: After sequentially forming a pad oxide layer and the first insulating pattern on a substrate(100), the first spacer is formed at both sidewalls of the first insulating pattern. The first punch-through region(105) and a channel threshold voltage control region(106) are formed in the substrate(100). After etching the pad oxide layer using the first spacer as a mask, a gate insulating layer(107) is formed on the substrate. Gate patterns(110a,110b) are formed on the gate insulating layer. After removing the first spacer, the second punch-through region(111) and a hollow region(112) are formed in a cell and peripheral region, respectively. After removing the first insulating pattern, the second insulating layer(113) is formed on the resultant structure. An LDD(Lightly Doped Drain) region(114) is formed in the substrate. After forming the second spacer(115a) at both sidewalls of the gate patterns, a source and drain region(116) are formed.
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