| 摘要 |
PURPOSE: A method for fabricating a multilayer interconnection is provided to prevent a void and a burst of the void by making a corroded portion of a tungsten plug filled with a titanium spacer and by forming a tetra ethyl ortho silicate(TEOS) layer on the resultant structure. CONSTITUTION: An interlayer dielectric(33) having a via hole is formed on the first interconnection layer. A plug filling the via hole is formed. A conductive layer for an interconnection is formed on the interlayer dielectric including plug. A photoresist layer pattern for an interconnection mask is formed on the conductive layer. The conductive layer is selectively etched to form an interconnection layer by using the photoresist layer pattern as a mask wherein the plug is exposed by misalignment. The photoresist layer pattern is removed by using oxygen plasma while the exposed plug is corroded. The titanium spacer(40) is formed at both sides of the interconnection layer on the corroded plug. The TEOS layer(41) is formed on the resultant structure including the titanium spacer.
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