发明名称 Opto-electronic device integration
摘要 A method of integrating a chip with a backside active optical chip is described. The backside active optical chip has at least one optical device, having an active side, including an optically active region and an optically inactive region each abutting a substrate, a bonding side opposite the active side, and a device thickness. The method involves if the substrate has a substrate thickness in excess of 100 microns over the optically active region, thinning the substrate over the optically active region while leaving at least some substrate over the optically inactive region; bonding the optical chip to the electronic chip using a flip chip process; and creating access ways in the substrate over optically active regions. A hybrid electro-optical chip having an electronic chip and a backside active optical chip is also described, wherein the hybrid electro-optical chip is created by one of the described processes. A module is also described. The module has an optical chip having at least one laser, the at least one laser having opposed mirrors defining a cavity therebetween of a thickness, an electronic chip bonded to the optical chip, a substrate over an active region of the laser, the substrate having a thickness of between about ten times the thickness and about 100 microns, and an anti-reflective coating on top of the substrate.
申请公布号 US2003006416(A1) 申请公布日期 2003.01.09
申请号 US20010896189 申请日期 2001.06.29
申请人 DUDOFF GREG;TREZZA JOHN 发明人 DUDOFF GREG;TREZZA JOHN
分类号 G02B6/42;H01L25/16;H01L27/146;H01L27/15;H01S5/02;H01S5/40;H01S5/42;(IPC1-7):H01L27/15;H01L31/12;H01L33/00 主分类号 G02B6/42
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