发明名称 Method for fabricating capacitor of semiconductor memory device
摘要 A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride layer on the nitride layer by performing a nitrogen plasma treatment; depositing a first TiN layer for a top electrode on the dielectric layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.
申请公布号 US2003008455(A1) 申请公布日期 2003.01.09
申请号 US20020166602 申请日期 2002.06.12
申请人 KIM KYONG- MIN;PARK KI-SEON 发明人 KIM KYONG- MIN;PARK KI-SEON
分类号 H01L27/04;H01L21/02;H01L21/285;H01L21/314;H01L21/316;H01L21/318;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/31;H01L21/469;H01L21/44 主分类号 H01L27/04
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