发明名称 |
Method for fabricating capacitor of semiconductor memory device |
摘要 |
A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride layer on the nitride layer by performing a nitrogen plasma treatment; depositing a first TiN layer for a top electrode on the dielectric layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.
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申请公布号 |
US2003008455(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020166602 |
申请日期 |
2002.06.12 |
申请人 |
KIM KYONG- MIN;PARK KI-SEON |
发明人 |
KIM KYONG- MIN;PARK KI-SEON |
分类号 |
H01L27/04;H01L21/02;H01L21/285;H01L21/314;H01L21/316;H01L21/318;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/31;H01L21/469;H01L21/44 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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