METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to restrain oxidation of a dielectric film and to shorten the thickness of effective oxide layer by forming a dense and uniform interface oxide layer. CONSTITUTION: A polysilicon lower electrode(100) is formed on a semiconductor substrate. A nitride layer(110) is formed by performing a plasma nitridation treatment to the polysilicon lower electrode(100). A dense and uniform interface oxide layer(120a) are formed on the nitride layer(110) by using N2O plasma and annealing. A dielectric film(130) made of Ta2O5 or TaON is formed on the interface oxide layer(120a). An upper electrode(140) is then formed on the dielectric film(130).