| 摘要 |
PURPOSE: A fabrication method of a semiconductor memory device is provided to prevent a nitride layer from directly contacting silicon and junction leakage by using an oxide layer as a buffer. CONSTITUTION: Word lines are formed on a silicon substrate(100) defined by a cell and peripheral region. An oxide layer(24) as a buffer layer is formed only on the word line and the exposed silicon substrate(100). After forming a sealing nitride layer(25) on the resultant structure, ions are selectively implanted into the silicon substrate(100) of the peripheral region. After depositing the first oxide layer, ion-implantation processing is performed. A spacer(30) is formed at both sidewalls of the word line in the peripheral region by depositing and patterning the second oxide layer. After implanting ions so as to form a source and drain, the remaining first and second oxide layer are removed. By deposition and etch-back of a nitride layer on the resultant structure, a field oxide barrier(33) is formed in the cell region.
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