Method of measuring an impurity profile of a semiconductor wafer and program for measuring an impurity profile of a semiconductor wafer

摘要

Disclosed is a program for measuring the impurity in semiconductor wafer, comprising an instruction for supplying to a computer a reference dose, an instruction for causing the computer to convert each of a plurality of impurity profiles measured in a direction of depth of the semiconductor wafer into a dose, and an instruction for causing the computer to select a converted dose closest to the reference dose from the plurality of converted doses.