| 摘要 |
In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers.
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