发明名称 |
Semiconductor integrated circuit device with internal power supply potential generation circuit |
摘要 |
An internal power supply potential generation circuit includes an overcharge prevention circuit connected to an internal power supply node. The overcharge prevention circuit includes a circuit outputting a signal to be determined that is determined by an internal power supply potential, a differential amplification circuit amplifying a difference in potential between the signal to be determined and a reference potential for output to a node as a signal indicating that current should be drawn, and a current draw circuit drawing current from the internal power supply node in response to the signal indicating that current should be drawn. Thus the semiconductor integrated circuit device of interest can provide a steady internal power supply potential.
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申请公布号 |
US2003007296(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020095080 |
申请日期 |
2002.03.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOMISHIMA SHIGEKI;NIIRO MITSUTAKA;MARUTA MASANAO;KATO HIROSHI;ISHIKAWA MASATOSHI;TSUJI TAKAHARU;HIDAKA HIDETO;TANIZAKI HIROAKI;OOISHI TSUKASA |
分类号 |
G11C11/407;G11C5/14;G11C11/401;G11C29/06;(IPC1-7):H02H7/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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