| 摘要 |
PURPOSE: A fabrication method of a plug in a semiconductor device is provided to prevent short between plugs by removing polysilicon residues and to restrain exposure of voids by improving profile of polysilicon plug. CONSTITUTION: The first conductive patterns and the second conductive layer are sequentially formed on a semiconductor substrate(21). Plug lines are formed by selectively etching the second conductive layers. Polysilicon residues are previously removed by selectively etching the plug lines. After sequentially forming an interlayer dielectric(26) on the resultant structure, a polysilicon plug(28) is then formed by polishing to expose the plug lines using CMP(Chemical Mechanical Polishing).
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