| 摘要 |
PURPOSE: A repair method for a high speed memory is provided, which operates without a time loss required in comparing an address signal generated in a counter with a repair address signal each time. CONSTITUTION: According to the repair method of a semiconductor memory device comprising a repair circuit repairing N column address signals having a fixed burst length and a defective bit and an output signal of a counter, the first column address signal among the above N column address signals is received and detected. And if the first column address signal is within a column address signal including the defective bit and the burst length, it is controlled to perform a redundancy operation. As to an additional address signal by the counter, the repair operation is performed without comparison as to a redundancy matching.
|
