METHOD FOR FORMING FIELD OXIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a field oxide of semiconductor devices is provided to prevent generation of voids and defects by forming a deep insulation region at lower part of a trench. CONSTITUTION: After forming a pad oxide pattern(13) and a nitride pattern(15) on a semiconductor substrate(11), a trench is formed by selectively etching the exposed substrate(11). After forming a sacrificial layer on the resultant structure, an ion-implanted region is formed at a lower part of the trench by implanting an insulating material into the trench. A deep insulation region(24) is formed by reaction between the ion-implanted region and the substrate(11) using annealing. After removing the sacrificial layer, a field oxide layer(26) is formed by filling an insulation layer into the trench and planarizing.