| 摘要 |
PURPOSE: A method for fabricating a tungsten gate is provided to avoid an electron trap in a gate oxide layer by preventing fluorine ions from being diffused to the inside of the gate oxide layer, and to increase reliability of a semiconductor substrate by preventing the gate oxide from increasing in thickness. CONSTITUTION: A stack structure composed of the gate oxide layer(20), a doped polysilicon layer(30) and the first MSW6 layer(40) is formed on a semiconductor substrate(10). A rapid thermal annealing(RTA) process is performed. The second MSW6 layer(50) is formed on the first MSW6 layer. A gate is formed by an etch process. A polycide annealing process is performed.
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