ELECTRICALLY PROGRAMMABLE RESISTANCE CROSS POINT MEMORY

摘要

PURPOSE: An electrically programmable resistance cross point memory is provided to aid in the programming and readout of a bit region located within an active layer at the cross point of an upper electrode and a lower electrode by including the active layer of a perovskite material interposed between the upper and lower electrodes. CONSTITUTION: A substrate is prepared. A plurality of lower electrodes(14) are placed on the substrate. A plurality of upper electrodes(18) are placed on the lower electrodes. A successive active layer is interposed between the plurality of upper electrodes and the plurality of lower electrodes.