| 发明名称 |
Fabricating capacitor of semiconductor device |
| 摘要 |
Disclosed is a method for fabricating a capacitor in a semiconductor device. A semiconductor substrate is provided. A bottom electrode is formed on the substrate by sequentially depositing Ru through a PECVD process and Ru through a LPCVD process on the semiconductor substrate. A Ta2O5 dielectric layer is formed on the bottom electrode and forming a top electrode on the Ta2O5 dielectric layer.
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| 申请公布号 |
US2003008454(A1) |
申请公布日期 |
2003.01.09 |
| 申请号 |
US20020164310 |
申请日期 |
2002.06.07 |
| 申请人 |
KIM KYONG-MIN |
发明人 |
KIM KYONG-MIN |
| 分类号 |
C23C16/18;H01L21/02;H01L21/285;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/20;H01L21/44 |
主分类号 |
C23C16/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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