| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent out-diffusion of boron ions into the isolation layer by forming a SiGe layer on the surface of the trench when performing a trench corner rounding process. CONSTITUTION: After forming a pad oxide layer(22) and a pad nitride layer(23) on a silicon substrate(21), a trench(24) is formed by etching the exposed substrate(21). A SiGe layer(25) is formed on the entire surface of the trench(24) by using SEG(Selective Epitaxial Growth), ALD(Atomic Layer Deposition) or PECVD(Plasma Enhanced CVD) processing. An isolation layer(26) is then formed by filling an oxide layer into the trench and planarizing.
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