发明名称 METHOD FOR FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for forming a contact plug of a semiconductor device is provided to prevent misalignment and to resolve a problem that a contact area is not opened by forming all contact line in a line shape. CONSTITUTION: All contact lines, such as source contacts(31) and drain contacts(32) are formed in a line shape. A photoresist pattern(33) is remained between the drain contacts(32), so that the drain contacts(32) are isolated from each other. A gate is formed at interface(34) between the source contact(31) and the drain contact(32). Exposing the surface of the gate, the source contact plug is isolated from the drain contact plug by the gate.
申请公布号 KR20030002737(A) 申请公布日期 2003.01.09
申请号 KR20010038437 申请日期 2001.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, MIN GUK;JUNG, SEONG MUN;KIM, JEOM SU;LEE, SANG BEOM;LEE, YEONG BOK
分类号 H01L21/283;(IPC1-7):H01L21/283 主分类号 H01L21/283
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