| 摘要 |
PURPOSE: An erase voltage control circuit of a flash memory cell is provided to improve a reliability and an electrical characteristics of circuit operation to realize a normal erase operation without depending a change of power voltage or a characteristics change of circuit elements due to a manufacturing process by controlling the amplifying rate of the amplifying device by controlling the resistance ratio of the feedback circuit connected to an output terminal of the amplifying device. CONSTITUTION: An erase voltage control circuit of a flash memory cell includes a first amplifying block(240) for generating a first erasing voltage of a positive potential by amplifying a reference voltage, a second amplifying block(250) for generating a second erase voltage of a negative potential by amplifying the reference voltage, a first amplifying control block(241) for controlling the amplifying rate of the first amplifying block(240) by generating the first feedback voltage in response to a resistance ratio between the variable resistance block(242) and a first resistor(R21), a second amplifying control block(251) for controlling the amplifying rate of the second amplifying block(250) by generating the second feedback voltage in response to a resistance ratio between a second resistor(R22) and a third resistor(R23), a voltage dividing block(260) provided with a plurality of voltage drop devices connected to the output terminals of the first and the second amplifying blocks(240,250) for generating a predetermined dividing voltage, a third amplifying block(270) for amplifying the dividing voltage and a variable resistance control block(280) for storing the data to control the resistance value of the variable resistance block(242) in response to the output voltage of the third amplifying block(270) and for controlling the resistance value of the variable resistance block(242).
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