FLASH MEMORY CELL ARRAY AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A flash memory cell array and a fabrication method thereof are provided, which increases an operation speed of the device and improves a program characteristics by dividing the flash memory cell array into the first block and the second block and using them according to a control signal. CONSTITUTION: The flash memory cell array comprising a number of flash memory cells is divided into the first block and the second block, which are selected by the first and the second selection transistor driven according to different control signals each other. Thus, the flash memory cell of the first and the second block is selected by a signal from the decoder. The first and the second selection transistor are connected to a bit line of the memory cell of the first and the second block. The first and the second selection transistor are connected directly each other by a global bit line.