METHOD FOR FABRICATING TUNGSTEN LAYER

摘要

PURPOSE: A method for fabricating a tungsten layer is provided to improve the surface roughness of the tungsten layer without decreasing productivity by reducing an interval of time for nucleation and tungsten growth while uniformly maintaining the overall deposition time. CONSTITUTION: A tungsten nucleus(22) is formed on a semiconductor substrate. A tungsten layer(24) is grown from the nucleus. A tungsten nucleus(26) is formed again after the growth of the tungsten layer. A tungsten layer(28) is grown from the nucleus again. At least three steps out of the abovementioned four steps are repeated to stack the tungsten layers wherein bias power is applied to make the growth direction of the tungsten layer.