| 摘要 |
PURPOSE: A method for manufacturing a transistor of semiconductor devices is provided to improve reflash property, junction capacitance and hot-carrier by forming a metal film between an oxide and a nitride layer. CONSTITUTION: A gate oxide layer(203) and a dummy polysilicon layer are sequentially formed on a substrate(201). Dummy gate patterns are formed by selectively etching the dummy polysilicon layer and the gate oxide layer(203). A spacer(206) having a double layer is formed at both sidewalls of the dummy gate patterns. A junction region(207) is formed in the substrate. An interlayer dielectric is formed on the resultant structure so as to expose the dummy polysilicon layer. After forming a groove by removing the exposed dummy polysilicon layer, a channel region(209) is formed by implanting dopants into the groove. After partially filling a metal film(210) into the groove, a nitride layer(210) is entirely filled into the groove.
|
