| 摘要 |
PURPOSE: To provide a semiconductor device capable of forming a pocket area by using indium and decreasing the increase of leak current by ion injection of indium. CONSTITUTION: The semiconductor device has first and second active areas demarcated on the main surface of a silicon substrate, a first n channel MOS transistor formed on the first active area having a first extension area and a first pocket area adding the indium of first concentration at a position deeper than the first extension area, and a second n channel MOS transistor formed on the second active area having a second extension area and a second pocket area adding the indium of second concentration lower than the first concentration at another position deeper than the second extension area. Furthermore, boron may be ion-injected in the second pocket area.
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