发明名称 Method for manufacturing active matrix type liquid crystal display device
摘要 A TFT and a passivation film are formed on a transparent substrate and thereafter the passivation film is annealed. When measuring drain currents of a TFT at a fixed turn-on voltage (Von) and a fixed turn-off voltage (Voff), although performance of a TFT annealed (solid line) rarely changes, performance of a TFT not annealed (dashed line) changes to a large extent, in more detail, drain current drastically decreases in accordance with the change of TFT performance. This phenomenon means that on-resistance of a TFT not annealed is being increased to a great extent.
申请公布号 US2003007106(A1) 申请公布日期 2003.01.09
申请号 US20020173897 申请日期 2002.06.18
申请人 NEC CORPORATION 发明人 SAKAMOTO MICHIAKI;YAMAGUCHI YUICHI
分类号 G02F1/1368;G02F1/1333;G02F1/1362;G09F9/00;G09F9/30;G09F9/35;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/1368
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