发明名称 |
Polymers, resist compositions and patterning process |
摘要 |
A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.
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申请公布号 |
US2003008231(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020084828 |
申请日期 |
2002.02.28 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HARADA YUJI;WATANABE JUN;HATAKEYAMA JUN;KAWAI YOSHIO;SASAGO MASARU;ENDO MASAYUKI;KISHIMURA SHINJI;OOTANI MICHITAKA;MIYAZAWA SATORU;TSUTSUMI KENTARO;MAEDA KAZUHIKO |
分类号 |
C08F220/22;G03F7/004;G03F7/039;(IPC1-7):G03F7/038;G03F7/38;G03F7/40;G03F7/26 |
主分类号 |
C08F220/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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