发明名称 |
Structure and method for fabricating semiconductor structures with integrated thermo-electric devices |
摘要 |
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A thermo-electric device is integrated into the semiconductor structure.
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申请公布号 |
US2003006470(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20010897968 |
申请日期 |
2001.07.05 |
申请人 |
MOTOROLA, INC. |
发明人 |
FRANSON STEVEN JAMES;MARSHALL DANIEL S.;HOLM PAIGE M.;HOLMES JOHN E.;BOSCO BRUCE ALLEN;EMRICK RUDY M. |
分类号 |
H01L31/058;(IPC1-7):H01L31/058 |
主分类号 |
H01L31/058 |
代理机构 |
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代理人 |
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地址 |
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