发明名称 |
Fine structure and devices employing it |
摘要 |
In order to form three or more steps on a substrate with high precision, a first mask is formed to an area on the substrate corresponding with every other step, and also etching is performed on the area of the substrate to which the first mask is not formed, a second mask is formed to an area on the substrate to which the first mask has not been formed, and also etching is performed on the area on the substrate to which the first and the second masks are not formed.
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申请公布号 |
US2003008245(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020227794 |
申请日期 |
2002.08.27 |
申请人 |
IWASAKI YUICHI;TANAKA ICHIRO |
发明人 |
IWASAKI YUICHI;TANAKA ICHIRO |
分类号 |
C23F1/02;C23F1/20;C23F1/26;G02B5/18;G03F7/00;(IPC1-7):G03F1/00;G02B27/42 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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