| 摘要 |
<p>A shin sheet producing method for obtaining a thin sheet of metallic material or semiconductor material in that a substrate having a growth surface is contacted with a melt of the above-mentioned material to grow crystals of the material on the substrate, wherein as seen from the thin sheet growth surface side of the substrate, the substrate and/or the melt is moved so that the melt moves toward the thin sheet growth surface side of the substrate. For example, by moving a movable body of substrate having a growth surface (5a), the growth surface (5a) is brought into contact with a melt (3), and then the growth surface (5a) is separated from the melt (3), such series of moving operations causing crystals of the material to grow on the growth surface (5a); in such thin sheet producing method, the orbit of the substrate leaving the melt (3) is circular, and the distance between the front end of the growth surface (5a) as seen in the movement direction and the center of rotation along the circular orbit is set at a value smaller than the distance between the terminal end of the growth surface (5a) as seen in the movement direction and the center of rotation along the circular orbit.</p> |
