| 摘要 |
<p>A receiver capable of reducing a low-frequency noise generated when a component is integrally formed on a semiconductor substrate by using CMOS process or MOS process. A high-frequency amplifier circuit (11), a mixing circuit (12), a local oscillator (13), intermediate-frequency filters (14, 16), an intermediate-frequency amplifier (15), a limit circuit (17), an FM detection circuit (18), and a stereo decoding circuit (19) constituting an FM receiver are formed as a single-chip part (10). This single-chip part (10) is formed on a semiconductor substrate by using the CMOS process or the MOS process. The amplification elements contained in the mixing circuit (12), the intermediate-frequency filters (14, 16), the intermediate-frequency amplifier circuit (15), and the local oscillator (13) are formed by using the p-channel type FET.</p> |
