SIDEWALL SPACER DEFINITION OF GATES

摘要

A method of forming features on a semiconductor device uses sidewall spacers, and includes providing a sidewall template (210) having first (224) and second (228) sidewall regions. A spacer layer (212) of a spacer material is formed over the sidewall template (210). The spacer layer (212) is then etched in a first etch to remove a first region (222) of the spacer layer over the first sidewall region (224) while leaving a second region (226) of the spacer layer (212) over the second sidewall region (228). The spacer layer (212) is again etched in a second etch to for at least one sidewall spacer (234).