| 摘要 |
PURPOSE: A method for forming fine line patterns is provided to reduce the size of gate lines and pattern fidelity and to improve processing margins by using a sacrificial oxide pattern. CONSTITUTION: A conductive layer and a sacrificial oxide layer are sequentially formed on a substrate. The sacrificial oxide layer is dry-etched by using a photoresist pattern. After removing the photoresist pattern, the sacrificial oxide pattern is wet-etched so as to reduce CD(Critical Dimension) of the sacrificial oxide layer. After coating a low-permittivity layer on the CD, the sacrificial oxide pattern is partially exposed by etch-back of the low-permittivity layer. A trench is formed by removing the exposed sacrificial oxide pattern. A gate hard mask(6A) is formed by filling a nitride layer into the trench and polishing the nitride layer to expose the low-permittivity layer. After stripping the exposed low-permittivity layer, a conductive line pattern(1A) is formed by dry-etching of the conductive layer using the gate hard mask(6A).
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