| 摘要 |
PURPOSE: A fabrication method of a CMOS image sensor is provided to improve photo sensitivity of image sensor by removing loss of optical energy at center portion of a micro lens. CONSTITUTION: A protection layer(13) is formed on a substrate(0) having a photodiode(10). A color filter(14) and an OCM(Over Coating Material) layer(15) are sequentially formed on the protection layer(13). A micro lens(16) having a spacer shape is formed on the OCM layer(15) corresponding to edge portions of the photodiode(10). At this time, the micro lens(16) is formed by depositing a low-temperature oxide layer on the OCM layer(15) using PECVD(Plasma Enhanced CVD) and anisotropic etching of the low-temperature oxide layer.
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