| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to be capable of preventing oxidation of a lower barrier film and restraining anoxia of a tantalum oxide layer. CONSTITUTION: After forming a polysilicon plug(34) on a semiconductor substrate(31), an oxygen diffusion barrier film(36) made of TiN is formed on the polysilicon plug(34). The first ruthenium electrode(39) as a lower electrode is deposited on the barrier film(36) by using oxygen gas as a source gas, wherein the flow rate of the oxygen gas is lower than that of the total gas. A tantalum oxide layer(40) as a dielectric film is then formed on the first ruthenium electrode(39). The second ruthenium electrode(41) as an upper electrode is deposited on the dielectric film by using oxygen gas as a source gas, wherein the oxygen gas has a relatively high flow rate compared to the flow rate of total gas.
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