| 摘要 |
PURPOSE: A test pattern of a semiconductor device is provided to independently calculate defect density of each layer by electrically calculating the defect density of an interconnection layer and a connection layer, and to precisely and consistently measure the defect density by statistically obtaining correlativity between the defect density and yield. CONSTITUTION: A basic unit pattern corresponding to a connection inspecting pattern is formed. Two basic unit patterns horizontally and vertically protrude by a predetermined distance(L) while a space(L) is guaranteed between interconnection patterns. The two basic unit patterns are horizontally and vertically transferred by the distance(L) to form a leakage current inspecting pattern.
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