| 摘要 |
PURPOSE: A method for fabricating a static random access memory(SRAM) is provided to prevent the SRAM from being deteriorated by the add ions implanted into the first low density impurity region while decreasing a leakage current in the second low density impurity region, by implanting the add ions through a tilt ion implantation process. CONSTITUTION: A transistor including a gate electrode(35) and a source/drain region of a lightly-doped-drain(LDD) structure and the second conductivity type is formed on a semiconductor substrate(31) of the first conductivity type. An interlayer dielectric(43) whose surface is flat is formed on the semiconductor substrate including the gate electrode. The interlayer dielectric is selectively etched to form a local interconnection(LI) by using a contact mask and a mask for the LI. A tilt ion implantation process is performed on the entire surface including the contact hole and the LI to implant the add ions of the second conductivity type.
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