METHOD FOR FORMING METAL FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal film formation method of semiconductor devices is provided to reduce an RC delay and to improve a yield by using an insulating layer having a low permittivity as an interlayer dielectric. CONSTITUTION: The first metal pattern(12) is formed on a semiconductor substrate(11). An interlayer dielectric having a low permittivity is deposited on the resultant structure and an annealing process is performed. Fluorine ions are implanted into the interlayer dielectric and the doped interlayer dielectric is annealed. A via hole is then formed by selectively etching the interlayer dielectric. The second metal pattern(16) is filled into the via hole. Preferably, an SOG(Silicon On Glass) is used as the interlayer dielectric.