| 摘要 |
PURPOSE: A transistor of semiconductor devices is provided to reduce a threshold voltage and to increase a driving capability without enlarging OFF current by using resistors for branching voltage. CONSTITUTION: The transistor comprises the first NMOS transistor(N1), a PMOS transistor(P1), the second NMOS transistor(N2), and the first and second resistor(R1,R2). The first NMOS transistor(N1) having a desired threshold voltage further includes a gate electrode, a source and a drain. Drains of the PMOS transistor(P1) and the second NMOS transistor(N2) are commonly connected to the gate electrode of the first NMOS transistor(N1). The first and second resistor(R1,R2) are connected to the gate electrode of the first NMOS transistor(N1).
|
