| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high quality phase shifting mask blank having improved chemical resistance by forming a film comprising alternately stacked two or more films different from each other in composition containing at least one selected from metals, silicon, oxygen and nitrogen. SOLUTION: In the phase shifting mask blank with a phase shifting film formed on a transparent substrate, the phase shifting film comprises a film formed by alternately stacking two or more films different from each other in film composition containing at least one selected from metals, silicon, oxygen and nitrogen.</p> |
