发明名称 |
THIN FILM FORMING METHOD AND THIN FILM FORMING EQUIPMENT AND VAPOR DEPOSITION SOURCE |
摘要 |
PROBLEM TO BE SOLVED: To make a target material longer in life by forming thin films using the entire part of the exposure section of the target material. SOLUTION: The thin film forming equipment induces a trigger discharge between a trigger electrode 3 and the target material 1 in a reduced pressure atmosphere, generates an arc discharge between the target material 1 and an arc electrode 4 with the trigger discharge as a start and forms the thin film on a substrate 8 by irradiating the substrate 8 with the plasma generated on the outer peripheral surface of the target material 1 by the arc discharge. The one end side of the target material 1 is exposed more to the outer peripheral surface section on the substrate side than an insulating member 5 and the trigger electrode 3. The one end of the arc electrode 4 projects more to the substrate side than the exposed outer peripheral surface section of the target material 1 and a connected to terminal 9 of the arc power source for indicating the arc discharge is connected to the projected segment. The electric resistance value of the arranged electrode 4 is higher than the electric resistance value of the target material 1.
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申请公布号 |
JP2003003251(A) |
申请公布日期 |
2003.01.08 |
申请号 |
JP20010185864 |
申请日期 |
2001.06.20 |
申请人 |
OLYMPUS OPTICAL CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
TOMITANI MANABU;ISOGAWA SEIJI;HIDAKA TAKESHI;TOJO HIROMI;HORINO YUJI;CHATANIHARA AKIYOSHI |
分类号 |
C23C14/24;(IPC1-7):C23C14/24 |
主分类号 |
C23C14/24 |
代理机构 |
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