| 摘要 |
PURPOSE: A method for improving the characteristic of a gate oxide layer is provided to prevent fluorine ions and boron ions from penetrating an underlying layer by forming an interfacial layer between the first and second poly layers. CONSTITUTION: After the gate oxide layer(12) is formed on a semiconductor substrate(10), the first poly layer(14) is stacked. Nitrogen supply is stopped and oxygen is supplied to the same tube so that an annealing process is performed. The second poly layer(18) is stacked on the resultant structure at a temperature higher than that of the first poly layer so that the interfacial layer(16) as an isolation layer is formed between the first and second poly layers. After a tungsten silicide layer and an anti-reflective layer are stacked on the resultant structure, a gate is formed by a masking process. An insulation layer is formed on the gate to form a spacer layer by a blanket-etch process. Ions are implanted into an active region to form a source/drain region.
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